Umesh

Mishra, Ph.D.

Transphorm

CTO & Co-Founder

Umesh shares responsibility for the strategic direction of Transphorm, as well as customer relationships and technology. Prior to co-founding Transphorm in 2007, Umesh co-founded Nitres Inc. in 1996 – the first start-up company to develop GaN LEDs and RF transistors. Nitres was acquired by Cree (now Wolfspeed) in 2000. Umesh was elected to the National Academy of Engineering in 2009 and received the IEEE David Sarnoff Award for “The Development of Gallium Nitride Electronics”. He is also a Distinguished Professor (the highest academic rank in the University of California system) in the ECE Department at the University of California, Santa Barbara, where he has been a director of several GaN research centers.

Umesh shares responsibility for the strategic direction of Transphorm, as well as customer relationships and technology. Prior to co-founding Transphorm in 2007, Umesh co-founded Nitres Inc. in 1996 – the first start-up company to develop GaN LEDs and RF transistors. Nitres was acquired by Cree (now Wolfspeed) in 2000. Umesh was elected to the National Academy of Engineering in 2009 and received the IEEE David Sarnoff Award for “The Development of Gallium Nitride Electronics”. He is also a Distinguished Professor (the highest academic rank in the University of California system) in the ECE Department at the University of California, Santa Barbara, where he has been a director of several GaN research centers.

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Upcoming Events

May 23rd

 | 

14:40 – 15:00

14:40 – 15:00

GaN Technology Requirements: Serving the Broadest Medium Voltage Market with the Highest Reliability and Lowest Cost

GaN technology needs to serve the widest variety of markets to be a viable, long-term solution. To advance market adoption today well into tomorrow, GaN technology should then provide high performance with high reliability for low watt markets such as adapters through to Titanium-class power supplies as well as Electric Vehicle solutions (e.g., on-board chargers and DC/DC converters). Drawing on more than a decade of experience developing and supplying GaN technology to various industries, this presentation will detail broad market needs and opportunities as well as how diverse, qualified 650V and 900V product portfolios coupled with demonstrated 1200V devices validate GaN’s market-readiness.

Transphorm

Transphorm, Inc., a global leader in the GaN revolution, designs and manufactures high performance and high reliability GaN semiconductors for high voltage power conversion applications. Having one of the largest Power GaN IP portfolios of more than 1,000 owned or licensed patents, Transphorm produces the industry’s first JEDEC and AEC-Q101 qualified high voltage GaN semiconductor devices. The Company’s vertically integrated device business model allows for innovation at every development stage: design, fabrication, device, and application support. Transphorm’s innovations are moving power electronics beyond the limitations of silicon to achieve over 99% efficiency, 40% more power density and 20% lower system cost. Transphorm is headquartered in Goleta, California and has manufacturing operations in Goleta and Aizu, Japan.