Dr. Michel (Mike) Rosa is chief marketing officer (CMO) and senior vice president responsible for strategy at Onto Innovation. Prior to his current role, Mr. Rosa served as CMO for Applied Materials ICAPS and advanced packaging groups, where he was responsible for leadership of strategic and technical marketing, marketing communications, charting device segment inflection roadmaps and providing strategic business development support toward M&A activities. He has over 25 years’ experience in semiconductor engineering and technology, with roles that span device design and fabrication, equipment development, marketing and sales. His technical qualifications include B.Eng. (Hons) and Ph.D. degrees in Microelectronic Engineering and an MBA with dual majors in marketing and business strategy. Mr. Rosa has authored over 40 journal and conference publications and holds over 29 U.S. patents.
Dr. Michel (Mike) Rosa is chief marketing officer (CMO) and senior vice president responsible for strategy at Onto Innovation. Prior to his current role, Mr. Rosa served as CMO for Applied Materials ICAPS and advanced packaging groups, where he was responsible for leadership of strategic and technical marketing, marketing communications, charting device segment inflection roadmaps and providing strategic business development support toward M&A activities. He has over 25 years’ experience in semiconductor engineering and technology, with roles that span device design and fabrication, equipment development, marketing and sales. His technical qualifications include B.Eng. (Hons) and Ph.D. degrees in Microelectronic Engineering and an MBA with dual majors in marketing and business strategy. Mr. Rosa has authored over 40 journal and conference publications and holds over 29 U.S. patents.
Today’s power semiconductor device market is enjoying tremendous growth – fueled by end use applications in industrial, automotive and consumer markets. Enabling these end use applications are a variety of unique power technologies that together support all manner of device applications from high power and high speed switching to a variety of power management functions. Each of these device technologies are themselves enabled by a unique set of materials, ranging from traditional Silicon to more specialized materials including Silicon Carbide (SiC) and Gallium Nitride (GaN). The device architectures these materials support and the front end processing requirements have pose additional challenges to yield and productivity within a high volume manufacturing environment. Everything from starting wafer frontside and backside inspection on bulk quality and composition to epitaxial layer defect-free growth, metrology and inspection play a significant role in ensuring high wafer yield even before the first etch or deposition process has begun. This presentation will briefly introduce some key technologies used in the defect mapping of incoming wafer and epi layers for SiC and GaN-based power devices. The introduction also Includes additional front end process control technologies ensuring maximum yield through process steps from gate etch to dopant implant and thick metallization.