Ralf Bornefeld is Senior Vice President with responsibility for business line and engineering of Power Semiconductors & Modules at Bosch. He joined Bosch in November 2019.
Before he held various management positions at Infineon Technologies AG: senior director technology in frontend production from 2005-2008, senior director engineering of automotive sensors until 2011 and finally vice president and general manager business line automotive sensors.
Ralf started his career at Elmos Semiconductor in 1992 as a technology development engineer. Afterwards he took several management positions until end of 2004, mostly serving as vice president of R&D and eventually as vice president of business line microsystems.
Ralf Bornefeld was born in Schalksmuehle, Germany, in 1964. He graduated with a degree in Electrical Engineering from Technical University of Dortmund in 1992.
Most electric vehicles on the road are still using silicon-based power semiconductors, but SiC penetration is growing fast for new generations to come. Will this trend hold on? The presentation will reflect the current situation putting market requirements, application needs and technology capabilities in perspective. Essential elements and changes along the value chain will be discussed and transferred to the resulting impact on wide-bandgap semiconductor components. Finally, the question if GaN is complementing or replacing SiC in the long run will be reviewed.