Dr. Avinash (Avi) Kashyap is the Vice President of Power Technology in the Automotive Solutions Business Unit at Renesas Electronics. He leads multiple initiatives in engineering, commercialization, marketing and business development of advanced power solutions for the automotive market.

Prior to his current role, he was Director of Silicon Carbide and Head of R&D for power discretes at Microchip Technology. Dr. Kashyap led engineering groups ranging from device design, process integration and test. He was responsible for creating product roadmaps and execution of critical silicon and wide bandgap programs including SiC FETs and diodes, Si low voltage FETs, rad-hard FETs and RF power switches.

Previously, Dr. Kashyap was leading several Federal Government and internally funded SiC programs at the GE Global Research Center in Niskyuna, NY. He has been involved in the development of SiC technology since its infancy for nearly 20 years including pioneering work on compact modeling, SiC integrated circuits and radiation-hardened devices. He has authored more than 35 peer-reviewed publications and has over 20 patents granted or pending. Dr. Kashyap holds an MS & PhD in electrical engineering from the University of Arkansas, Fayetteville. He is a senior member of the IEEE and a member of the Arkansas Academy of Electrical Engineers.

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